esda6v 8 v 5 will semiconductor ltd. 1 revision 3. 0 , 201 6 / 1 0 / 2 6 ESDA6V8V5 4 - line s, uni - directional, trans ient voltage suppressor descriptions the ESDA6V8V5 array is 4 - line esd transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to ele ctrostatic discharge (esd). the se devices clamp the voltage just above the logic level supply for positive transient and to a diode drop below ground for negative transient. the ESDA6V8V5 may be used to provide esd protection up to 30 k v (contact discharg e ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 8 a ( 8/20 s ) according to iec61000 - 4 - 5. the ESDA6V8V5 is available in sot - 553 package. standard products are pb - free and halogen - free. features ? reverse stand - off voltage: 5 v max. ? transient pr6otection for each line according to iec61000 - 4 - 2 (esd): 30kv ( contact discharge) iec61000 - 4 - 5 (surge): 8 a (8/20 s) ? capacitance: c j = 55 pf typ . ? low leakage current ? l ow clamping voltage ? solid - state silico n technology applications ? cell phone handsets and accessories ? personal digital assistants ? notebooks, desktops, and servers ? portable instrument http // : www. sh - willsemi.com sot - 5 53 circuit diagram t b = device code * = date code marking & pin configuration order i nformation device package shipp ing ESDA6V8V5 - 5 /tr sot - 553 3000/tape&reel 1 2 3 5 4 5 4 3 1 2 i / o i / o i / o i / o g n d * t b
esda6v 8 v 5 will semiconductor ltd. 2 revision 3. 0 , 201 6 / 1 0 / 2 6 absolute maximum ratings electrical characteristics (t a = 25 o c , unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power (t p = 8/20 s) p pk 9 6 w peak pulse current (t p = 8/20s) i pp 8 a esd according to iec61000 - 4 - 2 air discharge v esd 30 kv esd according to iec61000 - 4 - 2 contact discharge 30 junction temperature t j 125 o c operation temperature t op - 40~85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
esda6v 8 v 5 will semiconductor ltd. 3 revision 3. 0 , 201 6 / 1 0 / 2 6 electrical characteristics (t a = 25 o c , unless otherwise noted) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) conta ct discharge mode, according to iec61000 - 4 - 2 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symb ol condition min. typ. max. unit reverse stand - off voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v 1 a reverse breakdown voltage v br i br = 1ma 6. 2 8. 2 v forward voltage v f i f = 1 0ma 0.4 0. 8 1.25 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 11 v clamping voltage 2 ) v cl v esd = +8kv 11 v dynamic resistance 1) r dyn 0.25 clamping volt age 3 ) v cl i pp = 1a, t p = 8/20s 9 v i pp = 8 a , t p = 8/20s 1 2 v junction capacitance c j v r = 0v, f = 1mhz 55 65 pf
esda6v 8 v 5 will semiconductor ltd. 4 revision 3. 0 , 201 6 / 1 0 / 2 6 typical characteristics ( t a = 25 o c , unless otherwise noted ) 8/20 s waveform per iec61000 - 4 - 5 cont act discharge current waveform per iec61000 - 4 - 2 clamping voltage vs. peak pulse current capacitance vs. rever se voltage non - repetitive peak pulse power vs. pulse time power derating vs. ambient temperature 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 5 6 7 8 9 10 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 pulse waveform: t p = 8/20 s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 1 10 100 1000 10 100 1000 peak pulse power (w) pulse time ( s) 0 1 2 3 4 5 25 30 35 40 45 50 55 f = 1mhz v ac = 50mv junction capacitance (pf) v r - reverse voltage (v) 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 s time to half-value: t 2 = 20 s peak pulse current (%) time ( s) t
esda6v 8 v 5 will semiconductor ltd. 5 revision 3. 0 , 201 6 / 1 0 / 2 6 typical characteristics ( t a = 25 o c , unless otherwise noted ) esd clamping esd clamping (+8kv contact discharge per iec61000 - 4 - 2) ( - 8kv contact discharge per iec61000 - 4 - 2) tlp measurement 20ns/div 10v/div 20ns/div 10v/div 0 1 2 3 4 5 6 7 8 9 10 11 12 -2 0 2 4 6 8 10 12 14 16 18 20 22 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESDA6V8V5 will semiconductor ltd. 6 revision 3.0, 2016/10/26 package outline dimensions sot-553 recommend land pattern (unit: mm) symbol dimensions in millimeters min. typ. max. a 0.525 - 0.600 a1 0.000 - 0.050 d 1.500 - 1.700 e 1.500 - 1.700 e1 1.100 - 1.300 b 0.170 - 0.270 c 0.090 - 0.160 e 0.450 - 0.550 l 0.100 - 0.300 7 o ref. 0.50 0.50 1.35 1.00 0.45 0.30 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met.
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